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Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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200v Silicon Power Transistor High Current Transistor Low Leakage

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China 200v Silicon Power Transistor High Current Transistor Low Leakage wholesale
  • China 200v Silicon Power Transistor High Current Transistor Low Leakage wholesale

200v Silicon Power Transistor High Current Transistor Low Leakage
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Place of Origin :ShenZhen China
Brand Name :OTOMO
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :MMBD1501A
Type :SWITCHING DIODESOD
FEATURE :Low Leakage
Power mosfet transistor :SOT-23 Plastic-Encapsulate Diodes
DC Blocking Voltage :200v
Product ID :MMBD1501A
Power Dissipation :350mW
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes


FEATURE
 Low Leakage
 High Conductance

Marking :A11

200v Silicon Power Transistor High Current Transistor Low Leakage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
200v Silicon Power Transistor High Current Transistor Low Leakage



ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

200v Silicon Power Transistor High Current Transistor Low Leakage





Typical Characterisitics


200v Silicon Power Transistor High Current Transistor Low Leakage200v Silicon Power Transistor High Current Transistor Low Leakage









Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°

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