Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

Manufacturer from China
Verified Supplier
4 Years
Home / Products / Dual Channel Mosfet /

Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals

Contact Now
Beijing Silk Road Enterprise Management Services Co.,LTD
Visit Website
City:shenzhen
Country/Region:china
Contact Now

Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals

Ask Latest Price
Place of Origin :ShenZhen China
Brand Name :OTOMO
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :RS3A THRU RS3M
Type :Fast Recovery Rectifier Diode
FEATURE :250 C/10 seconds at terminals
Terminals :Plated axial leads, solderable per MIL-STD-750,
Weight :0.003ounce,0.093grams
Product ID :RS3A THRU RS3M
Case :JEDEC DO-41 molded plastic body
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER


FEATURE
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals
MECHANICAL DATA
Case : JEDEC DO-214AC molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight :0.003ounce,0.093grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals
Note:
1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounte
Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals
,Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals
Inquiry Cart 0