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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
General Description:
The AP9926A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID = 6A
RDS(ON) < 25mΩ @ VGS=4.5V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID | Pack | Marking | Qty(PCS) |
AP9926A | SOP-8 | AP9926A XXX YYYY | 3000 |
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol | Parameter | Rating | Units |
V DS | Drain-Source Voltage | 20 | V |
V GS | Gate-Source Voltage | +12 | V |
ID@TA=25 ℃ | Drain Current, V GS @ 4.5V 3 | 6 | A |
ID@TA=70 ℃ | Drain Current, V GS @ 4.5V 3 | 4.8 | A |
IDM | Pulsed Drain Current1 | 26 | A |
P D@TA=25℃ | Total Power Dissipation | 2 | W |
Linear Derating Factor | 0.016 | W/ ℃ | |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Rthj-a |
Maximum Thermal Resistance, Junction- ambient |
62.5 | ℃/W |
Electrical Characteristics@Tj =25 C(unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
BV DSS | Drain-Source Breakdown Voltage | VGS=0V, I D=250uA | 20 | - | - | V |
RDS(ON) |
Static Drain-Source On- Resistance |
VGS=4.5V, I D=6A | - | 21 | 25 | mΩ |
VGS=2.5V, I D=4A | - | 32 | 45 | mΩ | ||
V GS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | - | - | 1.2 | V |
g fs | Forward Transconductance | VDS=10V, I D=6A | - | 6 | - | S |
IDSS | Drain-Source Leakage Current | VDS=20V, V GS =0V | - | - | 25 | uA |
Drain-Source Leakage Current (Tj=70 C) |
VDS=20V ,V GS=0V | - | - | 250 | uA | |
IGSS | Gate-Source Leakage | VGS=+12V, V DS=0V | - | - | +100 | nA |
Qg | Total Gate Charge | ID=6A | - | 11 | 17.6 | nC |
Qgs | Gate-Source Charge | - | 1.1 | - | nC | |
Qgd | Gate-Drain ("Miller") Charge | - | 4.1 | - | nC | |
td(on) | Turn-on Delay Time | VDS=10V | - | 4.2 | - | ns |
tr | Rise Time | - | 9 | - | ns | |
td(off) | Turn-off Delay Time | - | 23 | - | ns | |
f t |
Fall Time | - | 3.5 | - | ns | |
Ciss | Input Capacitance | - | 570 | 910 | pF | |
Coss | Output Capacitance | - | 90 | - | pF | |
Crss | Reverse Transfer Capacitance | - | 85 | - | pF | |
Rg | Gate Resistance | f=1.0MHz | - | 1.6 | 2.4 | Ω |
V SD | Forward On Voltage | IS=1.7A, V GS=0V | - | - | 1.2 | V |
trr | Reverse Recovery Time |
IS=6A, V GS=0V, dI/dt=100A/µs |
- | 21 | - | ns |
Qrr | Reverse Recovery Charge | - | 14 | - | nC |
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
BV DSS | Drain-Source Breakdown Voltage | VGS=0V, I D=250uA | 20 | - | - | V |
RDS(ON) |
Static Drain-Source On- Resistance |
VGS=4.5V, I D=6A | - | 21 | 25 | mΩ |
VGS=2.5V, I D=4A | - | 32 | 45 | mΩ | ||
V GS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | - | - | 1.2 | V |
g fs | Forward Transconductance | VDS=10V, I D=6A | - | 6 | - | S |
IDSS | Drain-Source Leakage Current | VDS=20V, V GS =0V | - | - | 25 | uA |
Drain-Source Leakage Current (Tj=70 C) |
VDS=20V ,V GS=0V | - | - | 250 | uA | |
IGSS | Gate-Source Leakage | VGS=+12V, V DS=0V | - | - | +100 | nA |
Qg | Total Gate Charge | ID=6A | - | 11 | 17.6 | nC |
Qgs | Gate-Source Charge | - | 1.1 | - | nC | |
Qgd | Gate-Drain ("Miller") Charge | - | 4.1 | - | nC | |
td(on) | Turn-on Delay Time | VDS=10V | - | 4.2 | - | ns |
tr | Rise Time | - | 9 | - | ns | |
td(off) | Turn-off Delay Time | - | 23 | - | ns | |
f t |
Fall Time | - | 3.5 | - | ns | |
Ciss | Input Capacitance | - | 570 | 910 | pF | |
Coss | Output Capacitance | - | 90 | - | pF | |
Crss | Reverse Transfer Capacitance | - | 85 | - | pF | |
Rg | Gate Resistance | f=1.0MHz | - | 1.6 | 2.4 | Ω |
V SD | Forward On Voltage | IS=1.7A, V GS=0V | - | - | 1.2 | V |
trr | Reverse Recovery Time |
IS=6A, V GS=0V, dI/dt=100A/µs |
- | 21 | - | ns |
Qrr | Reverse Recovery Charge | - | 14 | - | nC |
Attention
1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.
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