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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

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Brand Name :Hua Xuan Yang
Model Number :AP9926A
Certification :RoHS、SGS
Place of Origin :ShenZhen China
MOQ :Negotiation
Price :Negotiated
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Delivery Time :1 - 2 Weeks
Packaging Details :Boxed
Product name :Mosfet Power Transistor
Model :AP9926A
Pack :SOP-8
Marking :AP9926A XXX YYYY
VDSDrain-Source Voltage :20V
VGSGate-Sou rce Voltage :±12V
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

General Description:

The AP9926A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

General Features

VDS = 20V ID = 6A
RDS(ON) < 25mΩ @ VGS=4.5V

Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP9926A SOP-8 AP9926A XXX YYYY 3000

Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)

Symbol Parameter Rating Units
V DS Drain-Source Voltage 20 V
V GS Gate-Source Voltage +12 V
ID@TA=25 ℃ Drain Current, V GS @ 4.5V 3 6 A
ID@TA=70 ℃ Drain Current, V GS @ 4.5V 3 4.8 A
IDM Pulsed Drain Current1 26 A
P D@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/ ℃
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Rthj-a

Maximum Thermal Resistance, Junction-

ambient

62.5 ℃/W

Electrical Characteristics@Tj =25 C(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BV DSS Drain-Source Breakdown Voltage VGS=0V, I D=250uA 20 - - V
RDS(ON)

Static Drain-Source On-

Resistance

VGS=4.5V, I D=6A - 21 25
VGS=2.5V, I D=4A - 32 45
V GS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V
g fs Forward Transconductance VDS=10V, I D=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=20V, V GS =0V - - 25 uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,V GS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+12V, V DS=0V - - +100 nA
Qg Total Gate Charge ID=6A - 11 17.6 nC
Qgs Gate-Source Charge - 1.1 - nC
Qgd Gate-Drain ("Miller") Charge - 4.1 - nC
td(on) Turn-on Delay Time VDS=10V - 4.2 - ns
tr Rise Time - 9 - ns
td(off) Turn-off Delay Time - 23 - ns

f

t

Fall Time - 3.5 - ns
Ciss Input Capacitance - 570 910 pF
Coss Output Capacitance - 90 - pF
Crss Reverse Transfer Capacitance - 85 - pF
Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω
V SD Forward On Voltage IS=1.7A, V GS=0V - - 1.2 V
trr Reverse Recovery Time

IS=6A, V GS=0V,

dI/dt=100A/µs

- 21 - ns
Qrr Reverse Recovery Charge - 14 - nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BV DSS Drain-Source Breakdown Voltage VGS=0V, I D=250uA 20 - - V
RDS(ON)

Static Drain-Source On-

Resistance

VGS=4.5V, I D=6A - 21 25
VGS=2.5V, I D=4A - 32 45
V GS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V
g fs Forward Transconductance VDS=10V, I D=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=20V, V GS =0V - - 25 uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,V GS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+12V, V DS=0V - - +100 nA
Qg Total Gate Charge ID=6A - 11 17.6 nC
Qgs Gate-Source Charge - 1.1 - nC
Qgd Gate-Drain ("Miller") Charge - 4.1 - nC
td(on) Turn-on Delay Time VDS=10V - 4.2 - ns
tr Rise Time - 9 - ns
td(off) Turn-off Delay Time - 23 - ns

f

t

Fall Time - 3.5 - ns
Ciss Input Capacitance - 570 910 pF
Coss Output Capacitance - 90 - pF
Crss Reverse Transfer Capacitance - 85 - pF
Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω
V SD Forward On Voltage IS=1.7A, V GS=0V - - 1.2 V
trr Reverse Recovery Time

IS=6A, V GS=0V,

dI/dt=100A/µs

- 21 - ns
Qrr Reverse Recovery Charge - 14 - nC

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

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8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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