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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

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Place of Origin :ShenZhen China
Brand Name :OTOMO
Certification :RoHS、SGS
MOQ :1000-2000 PCS
Price :Negotiated
Packaging Details :Boxed
Delivery Time :1 - 2 Weeks
Payment Terms :L/C T/T Western Union
Supply Ability :18,000,000PCS / Per Day
Model Number :2N5401
VCBO :-160V
VCEO :-150V
VEBO :-5V
Usage :Electronic Components
Tj :150Š
Case :Tape/Tray/Reel
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)

FEATURE

Ÿ Switching and Amplification in High Voltage

Ÿ Applications such as Telephony

Ÿ Low Current

Ÿ High Voltage

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
2N5401 TO-92 Bulk 1000pcs/Bag
2N5401-TA TO-92 Tape 2000pcs/Box

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -0.6 A
PC Collector Power Dissipation 625 mW
R0 JA Thermal Resistance From Junction To Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55~+150 Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-120V,IE=0 -50 nA
Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA

DC current gain

hFE(1) VCE=-5V, IC=-1mA 80
hFE(2) VCE=-5V, IC=-10mA 100 300
hFE(3) VCE=-5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V
Transition frequency fT VCE=-5V,IC=-10mA, f =30MHz 100 300 MHz


CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 100-150 150-200 200-300

Typical Characteristics


SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015




TO-92 7DSH DQG 5HHO

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components






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